冶金法制备多晶Si杂质去除效果研究

徐云飞; 谭毅; 姜大川; 许富民

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冶金法制备多晶Si杂质去除效果研究
Inclusion Removal in Multi-crystal Silicon Fabricated by Metallurgical Method
2007年第9期页码：730-732
纸质出版日期： 2007 ，
DOI：

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[1]徐云飞,谭毅,姜大川,许富民.冶金法制备多晶Si杂质去除效果研究[J].特种铸造及有色合金,2007(09):730-732+656.

Xu Yunfei, Tan Yi, Jiang Dachuan, et al. Inclusion Removal in Multi-crystal Silicon Fabricated by Metallurgical Method[J]. Special Casting & Nonferrous Alloys, 2007,(9):730-732.
[1]徐云飞,谭毅,姜大川,许富民.冶金法制备多晶Si杂质去除效果研究[J].特种铸造及有色合金,2007(09):730-732+656. DOI：

Xu Yunfei, Tan Yi, Jiang Dachuan, et al. Inclusion Removal in Multi-crystal Silicon Fabricated by Metallurgical Method[J]. Special Casting & Nonferrous Alloys, 2007,(9):730-732. DOI：

摘要

采用电子束熔炼以及定向凝固对纯度为98.8%的工业Si进行提纯

研究电子束对Si中各种杂质的去除效果

以及定向凝固对金属杂质的去除效果。结果表明

电子束对Si中的各种主要杂质都有一定的去除效果

对P元素和Ca元素尤为明显

电子束熔炼可将其去除90%以上

定向凝固对Fe、Al、Ca等金属杂质的去除效果比较好。一次定向凝固可使Si中的Fe含量降到0.0001%以下。

Abstract

The effects of electron beam and directional solidification on the inclusion removal in the multi-crystal silicon were conducted with electron beams and direction solidification purifying 98.8% commercial silicon. The results show that the electron beams can effectively decrease main inclusion elements in the silicon

especially P and Ca element

decreasing by more than 90%

while directional solidification can effectively remove metal element inclusion

such as Fe

Ca elements. The Fe content in silicon can be decreased by less than 0.0001% using single directional solidification.