集成电路用Cu-Ni-Si-Cr合金流变应力行为研究

范莉; 刘平; 贾淑果; 田保红; 于志生

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集成电路用Cu-Ni-Si-Cr合金流变应力行为研究
Flow Stress Behavior of Cu-Ni-Si-Cr Alloy for Lead Frame Materials
2009年29卷第3期页码：283-285
纸质出版日期： 2009 ，
DOI：

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[1]范莉,刘平,贾淑果,田保红,于志生.集成电路用Cu-Ni-Si-Cr合金流变应力行为研究[J].特种铸造及有色合金,2009,29(03):283-285+196.

Fan Li, Liu Ping, Jia Shuguo, et al. Flow Stress Behavior of Cu-Ni-Si-Cr Alloy for Lead Frame Materials[J]. Special Casting & Nonferrous Alloys, 2009,29(3):283-285.
[1]范莉,刘平,贾淑果,田保红,于志生.集成电路用Cu-Ni-Si-Cr合金流变应力行为研究[J].特种铸造及有色合金,2009,29(03):283-285+196. DOI：

Fan Li, Liu Ping, Jia Shuguo, et al. Flow Stress Behavior of Cu-Ni-Si-Cr Alloy for Lead Frame Materials[J]. Special Casting & Nonferrous Alloys, 2009,29(3):283-285. DOI：

摘要

在Gleeble-1500D热模拟试验机上对Cu-Ni-Si-Cr合金在应变速率为10-2、10-1、1、5s-1、变形温度为600～800℃条件下进行流变应力行为研究。结果表明

应变速率和变形温度的变化对合金的再结晶影响较大

变形温度越高

合金越容易发生动态再结晶;应变速率越小

合金也越容易发生动态再结晶;并利用Arrhenius双曲正弦函数求得Cu-Ni-Si-Cr的热变形激活能Q为265.9kJ/mol;从Zener-Hollomon参数的指数函数形式得到应变速率解析表达式。

Abstract

Flow stress behavior of Cu-Ni-Si-Cr alloy was examined on the Gleeble-1500D testing machine with strain rate of 0.01～10 s-1 at 600～800℃.It is found that dynamic recystallization in the alloy is closely related with strain rate and deformation temperature.With increasing in deformation temperature

dynamic recrystallization behavior is easier to be observed

in turn

with decreasing in strain rate

it is easier to be observed.Hot deformation activation energy of the Cu-Ni-Si-Cr alloy is 265.9kJ/mol.In addition

a formula for strain rate is proposed based on exponent-type equation from the Zener-Hollomon parameters.