Effects of Strontium on Refinement Mechanism of Primary Si in A390 Aluminum Alloy Prepared by Copper Serpentine Pouring Channel

Yan Pengyu; Mao Weimin; Fan Jing; Wang Bingkun; Liu Yabo; Yan Bingdong

doi:10.15980/j.tzzz.2021.04.018

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Effects of Strontium on Refinement Mechanism of Primary Si in A390 Aluminum Alloy Prepared by Copper Serpentine Pouring Channel
Vol. 41, Issue 4, Pages: 474-477(2021)
Published： 2021 ，
DOI： 10.15980/j.tzzz.2021.04.018

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[1]闫鹏宇,毛卫民,范菁,王冰坤,刘亚博,颜丙栋.Sr对铜质蛇形通道制备半固态A390铝合金初生Si细化机制的影响[J].特种铸造及有色合金,2021,41(04):474-477.

Yan Pengyu, Mao Weimin, Fan Jing, et al. Effects of Strontium on Refinement Mechanism of Primary Si in A390 Aluminum Alloy Prepared by Copper Serpentine Pouring Channel. [J]. Special Casting & Nonferrous Alloys 41(4):474-477(2021)
[1]闫鹏宇,毛卫民,范菁,王冰坤,刘亚博,颜丙栋.Sr对铜质蛇形通道制备半固态A390铝合金初生Si细化机制的影响[J].特种铸造及有色合金,2021,41(04):474-477. DOI： 10.15980/j.tzzz.2021.04.018.

Yan Pengyu, Mao Weimin, Fan Jing, et al. Effects of Strontium on Refinement Mechanism of Primary Si in A390 Aluminum Alloy Prepared by Copper Serpentine Pouring Channel. [J]. Special Casting & Nonferrous Alloys 41(4):474-477(2021) DOI： 10.15980/j.tzzz.2021.04.018.

摘要

采用纯铜蛇形通道复合Sr变质处理A390铝合金

对蛇形通道内挂料的微观组织和挂料率进行分析

研究了在纯铜质蛇形通道冷却条件下

Sr对初生Si细化机制的影响。结果表明

Sr元素毒化异质形核质点

抑制初生Si形核。此外

Sr元素通过降低固、液界面之间的界面自由能促进初生Si形核和生长

通过增加原子通过固液界面迁移所需激活能抑制初生Si形核和生长。在较快的冷却速率下

Sr元素降低固、液界面之间的界面自由能是Sr对初生Si相影响的主导因素。

Abstract

A390 aluminum alloy was prepared by a composite process of serpentine pouring channel（SPC）and Srmodifier.The microstructure and hanging rate of hanging metal solidified in the SPC were analyzed and the effects of Sr

commonly used as a eutectic Si modifier

on the refinement mechanism of primary Si particles（PSPs）under the cooling condition in the SPC process were investigated.The results indicate that Sr poisoned heterogeneous nucleation sites inhibits the nucleation of the PSPs

which is the dominant factor in the growth of the PSPs under rapid cooling.Further more

Sr element promotes the nucleation and growth of the PSPs by decreasing the solidliquid interface energy.On the other hand

the nucleation and growth of the PSPs are inhibited by increasing the activation energy for diffusion of silicon atoms across the solid-liquid interface.