Vacuum Die Casting Technology and Application（Ⅰ）——The Change of Si,Cu Distribution in Vacuum HPDC Al-Si-Cu Alloys during Solution Treatment

Zhang Baizai; Jia Congbo; Li Li; Cao Hanxue

doi:10.15980/j.tzzz.2015.09.015

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Vacuum Die Casting Technology and Application（Ⅰ）——The Change of Si,Cu Distribution in Vacuum HPDC Al-Si-Cu Alloys during Solution Treatment
Vol. 35, Issue 9, Pages: 948-951(2015)
Published： 2015 ，
DOI： 10.15980/j.tzzz.2015.09.015

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[1]张百在,贾从波,李莉,曹韩学.真空压铸技术与应用(Ⅰ)——真空压铸Al-Si-Cu合金固溶处理时Si、Cu分布[J].特种铸造及有色合金,2015,35(09):948-951.

Zhang Baizai, Jia Congbo, Li Li, et al. Vacuum Die Casting Technology and Application（Ⅰ）——The Change of Si,Cu Distribution in Vacuum HPDC Al-Si-Cu Alloys during Solution Treatment. [J]. Special Casting & Nonferrous Alloys 35(9):948-951(2015)
[1]张百在,贾从波,李莉,曹韩学.真空压铸技术与应用(Ⅰ)——真空压铸Al-Si-Cu合金固溶处理时Si、Cu分布[J].特种铸造及有色合金,2015,35(09):948-951. DOI： 10.15980/j.tzzz.2015.09.015.

Zhang Baizai, Jia Congbo, Li Li, et al. Vacuum Die Casting Technology and Application（Ⅰ）——The Change of Si,Cu Distribution in Vacuum HPDC Al-Si-Cu Alloys during Solution Treatment. [J]. Special Casting & Nonferrous Alloys 35(9):948-951(2015) DOI： 10.15980/j.tzzz.2015.09.015.

摘要

对真空压铸（50.6kPa真空度）试样进行不同时间的固溶处理

用光学显微镜、扫描电镜、EDS、XRD研究真空压铸Al-Si-Cu合金固溶处理过程中Si、Cu分布的变化。结果表明

试样在500℃固溶处理2h

Si相可以得到较好的尺寸和形态分布

并且表面起泡尺寸小于100μm

相对于普通压铸

真空压铸试样可以得到更加细化的共晶Si粗化;在500℃固溶处理0.5h

Cu部分溶入基体

开始均匀化

共晶Si的粗化、分布不均匀同样会导致Cu元素分布不均匀。

Abstract

The change of Si

Cu distribution in vacuum HPDC Al-Si-Cu alloys samples（50% vacuum degree）with solution treated at different time was observed and analyzed by optical microscope

SEM

EDS

XRD.Results indicate that Si phase in the vacuum HPDC samples with solution treated 2hat 500℃ has satisfied size and distribution morphology and surface blister is less than 100μm.The finer eutectic Si particle can be generated in the vacuum HPDC samples compared with common HPDC samples.After solution treated at 500 ℃for 0.5h

Cu elements are dissolved into matrix partly to be homogenized

then its distribution is related with Si phase change.