Effects of Reverse Voltage and Oxidation Time on Coating Formation on AZ91D Magnesium Alloy

Wu Di; Liu Xiangdong; Lü Kai

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Effects of Reverse Voltage and Oxidation Time on Coating Formation on AZ91D Magnesium Alloy
Issue 7, Pages: 564-566(2008)
Published： 2008 ，
DOI：

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[1]乌迪,刘向东,吕凯.负向电压与氧化时间对AZ91D微弧氧化膜层形成特性的影响[J].特种铸造及有色合金,2008(07):564-566+492.

Wu Di, Liu Xiangdong, Lü Kai. Effects of Reverse Voltage and Oxidation Time on Coating Formation on AZ91D Magnesium Alloy. [J]. Special Casting & Nonferrous Alloys (7):564-566(2008)
[1]乌迪,刘向东,吕凯.负向电压与氧化时间对AZ91D微弧氧化膜层形成特性的影响[J].特种铸造及有色合金,2008(07):564-566+492. DOI：

Wu Di, Liu Xiangdong, Lü Kai. Effects of Reverse Voltage and Oxidation Time on Coating Formation on AZ91D Magnesium Alloy. [J]. Special Casting & Nonferrous Alloys (7):564-566(2008) DOI：

摘要

在硅酸盐体系下对AZ91D镁合金进行了微弧氧化处理

研究了负向电压和氧化时间对微弧氧化膜层特性的影响

并通过XRD、金相显微镜及SEM对氧化膜进行了相结构和表面形貌的分析。结果表明

随着负向电压的提高

膜厚逐渐增加

表面孔洞增大

但孔洞及微裂纹的数量减少

当负向电压为120V时

膜厚达到157μm

孔洞及裂纹数量最少。延长氧化时间

使得微弧氧化膜层厚度增加

膜层生长速率先增大后减小。氧化膜层主要由立方结构MgO和镁橄榄石相Mg2SiO4构成

衍射谱中未发现Mg的衍射峰

氧化膜层致密性较好。陶瓷膜层由致密层和疏松层组成且与基体结合紧密。

Abstract

Effects of reverse voltage and oxidation time on oxide film formation

which is prepared by micro-arc oxidation in silicate systems on the AZ91D magnesium

have been investigated

and the phase constituent and cross-section as well as surface morphology of the oxidized film were observed by XRD （X-ray diffraction）

OM （optical microscope） and SEM （scanning electron microscope）. The results show that with increasing in reverse voltage

oxide film thickness and size of surface pore are gradually increased while the number of pores and micro-crack is decreased. With reverse voltage of 120 V

the ceramic coating with 157 μm in thickness can be obtained with the lowest pores and cracks. With extending oxidation time

the thickness of oxide film is increased and growth rate of coating is firstly increased then decreased. The oxide film showing desirable compaction is composed of MgO phase and Mg2SiO4 phase in the absence of Mg phase.