The TiAlN films are deposited on polished face of Si（100） wafer and polished face of high speed steel separately by arc ion plating compounded with intermediate frequency unbalanced magnetron sputtering and the properties of TiAlN films and TiN films which deposited by arc ion plating is also tested and compared. The analysis results of SEM

EDS and XRD indicate: the size of droplets on the surface of TiAlN are smaller than that on the TiN films

the defects are eliminated at a large scale

and the microstructure of the surface is more compact and well mixed. The content of Al element in TiAlN films is around 0.86 %（ atm）

and the atoms ratio of Ti and N element is about 1∶1. The distortion in TiN films’ crystal structure is caused by the addition of Al element

and the lattice-constant of the TiN crystal structure is decreased. The mechanical properties of TiAlN films is increased by nearly 30%

compared to the TiN films.